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25 May 2004 High-frequency low-noise amplifiers and low-jitter oscillators in SiGe:C BiCMOS technology
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Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.544513
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
This paper describes the design of noise-critical circuits for radio-frequency and high-speed digital applications in a SiGe:C BiCMOS technology. Starting with a figure of merit for the high-frequency noise behavior of bipolar transistors, challenges in the transistor design are formulated. It is shown that the addition of carbon to the base of a SiGe-HBT results in an excellent high-frequency noise behavior of the transistors. A first design of a differential three-stage low-noise amplifier for 60 GHz applications is presented having a gain of 18 dB at 50 GHz. Furthermore, a 60 GHz voltage-controlled oscillator is presented with a phase noise of -90 dBc/Hz at 1 MHz offset from the oscillation frequency. Using a first-order PLL model, we predict an rms jitter contribution to a 5 MHz-bandwidth PLL as low as 0.4 percent of the oscillation period. Possible applications include wireless and wired broadband communication as well as automotive radar.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang Winkler, Johannes Borngraeber, Bernd Heinemann, Frank Herzel, and Rene Scholz "High-frequency low-noise amplifiers and low-jitter oscillators in SiGe:C BiCMOS technology", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.544513
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