25 May 2004 Investigation of the rf-noise behavior of InP-based DHBT with InGaAs base and GaAsSb base
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Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546981
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
The influence of base layer structure of InGaAs/InP and GaAsSb/InP double heterojunction bipolar transistors in terms of rf-performance and rf-noise behaviour was investigated in detail. With the use of a combined small-signal and rf-noise model it is possible to localize the noise-phenomena to specific device regions. With this knowledge, the transistor can be optimised in terms of the layer-structure achieve improved rf-performance.
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Silja Ehrich, Stefan Neumann, Wolfgang Brockerhoff, Franz-Josef Tegude, "Investigation of the rf-noise behavior of InP-based DHBT with InGaAs base and GaAsSb base", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546981; https://doi.org/10.1117/12.546981
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