LF-band noise in MOSFET in low power operation

Sumihisa Hashiguchi; Shunsuke Kawai; Makoto Ohki; Kaoru Someya

doi:10.1117/12.544230

25 May 2004 LF-band noise in MOSFET in low power operation

Sumihisa Hashiguchi, Shunsuke Kawai, Makoto Ohki, Kaoru Someya

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.544230
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

Noise performance of a commercial MOSFET was evaluated for the amplifier application in LF-band. The level of 1/f noise referred to the gate was about -126 dbV/Hz at 1 Hz and was proportional to f^-0.9. At 100 kHz noise was white and was equivalent to the thermal noise from 1 kΩ and 100 kΩ at the drain current of 100 μA and 1 μA, respectively. 2SK1771 is acceptable as the amplifying device connected to a tuning circuit whose resonant impedance is more than the values stated above.

Citation Download Citation

Sumihisa Hashiguchi, Shunsuke Kawai, Makoto Ohki, and Kaoru Someya "LF-band noise in MOSFET in low power operation", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.544230

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