25 May 2004 Low-frequency noise behavior in GaN HEMTs on silicon substrate
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Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.547046
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
In this paper, we report low frequency noise (LFN) data obtained on passivated AlGaN/GaN HEMT’s grown by MBE on a silicon substrate. In order to localize the LFN sources, we have measured all the extrinsic gate and drain current noise generators and their coherence versus bias in the linear regime. We have found that the gate noise sources result from leakage phenomena at gate-source and gate-drain regions. Drain noise sources are mostly located in the active channel below the gate and they feature an equivalent Hooge coefficient of about 10-3. Secondly, in order to build a LFN model that fits the requirements of a CAD simulator, we have measured the LFN sources for numerous bias points in the saturation region and therefore we have studied the bias dependence of the different noise sources under normal operating conditions. Results show that the gate terminal noise current impacts heavily the overall LFN of the transistor contrary to others III-V HEMTs, and that specific bias conditions are needed in order to reduce the LFN.
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Laurent Bary, Elena Angeli, Abdelali Rennane, Jean-Guy Tartarin, Jacques Graffeuil, Robert Plana, Sylvain Delage, Jean-Claude de Jaegger, Yvon Cordier, "Low-frequency noise behavior in GaN HEMTs on silicon substrate", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547046; https://doi.org/10.1117/12.547046
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