A complete analysis of the low-frequency (LF-) noise is performed on resistive FET mixers, where LF-noise is
created due to the self-mixing process of the local oscillator. First, a new scaleable noise model for field-effect
transistors in ohmic channel bias regime (Uds ≈ 0V) has been developed, which uses fluctuating resistances,
instead of noise voltage or noise current sources. Measurements on a hybrid, single-ended mixer prove a good
accuracy of the proposed model and reveal a method to distinguish between the different noise sources. Almost
complete cancellation of the low frequency noise can be achieved by proper operation.