25 May 2004 Low frequency noise cancellation in resistive FET mixers
Author Affiliations +
Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.544854
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
A complete analysis of the low-frequency (LF-) noise is performed on resistive FET mixers, where LF-noise is created due to the self-mixing process of the local oscillator. First, a new scaleable noise model for field-effect transistors in ohmic channel bias regime (Uds ≈ 0V) has been developed, which uses fluctuating resistances, instead of noise voltage or noise current sources. Measurements on a hybrid, single-ended mixer prove a good accuracy of the proposed model and reveal a method to distinguish between the different noise sources. Almost complete cancellation of the low frequency noise can be achieved by proper operation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georg Boeck, Georg Boeck, Michael Margraf, Michael Margraf, } "Low frequency noise cancellation in resistive FET mixers", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.544854; https://doi.org/10.1117/12.544854


Back to Top