25 May 2004 Microwave noise in III-V and SiGe based HBTs, comparison, trends, numbers
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Proceedings Volume 5470, Noise in Devices and Circuits II; (2004); doi: 10.1117/12.546899
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
Bias dependent microwave noise characteristics of high-speed 150 GHz SiGe HBTs as well as AlGaAs and InGaP HBTs were measured in the 2-26 GHz frequency range. The characteristics are compared with the compact bipolar transistor models HICUM and VBIC. For noise source analysis and decomposition, a detailed small-signal model with corresponding parameters is employed which is based on a compact model. In particular, the influence of the various noise sources and mechanisms on the minimum noise figure is investigated. As predicted by Van der Ziel, correlation between base and collector current shot noise in SiGe and AIIIBV HBTs is found to reduce NFmin for the frequency range of investigation. AIIIBV HBTs exhibit strong reduction of collector shot noise due to the conduction band peculiarity, what is not the case for SiGe based HBTs.
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Paulius Sakalas, Michael Schroter, "Microwave noise in III-V and SiGe based HBTs, comparison, trends, numbers", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546899; https://doi.org/10.1117/12.546899
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KEYWORDS
Data modeling

Resistance

Indium gallium phosphide

Microwave radiation

Transistors

Diffusion

Scattering

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