25 May 2004 Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise
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Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546994
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
Double Gate Metal-Oxide-Semiconductor Field-Effect-Transistors (DG MOSFETs) are one of the most promising candidates for future CMOS applications in order to comply with the ITRS requirements. Vertical quantum confinement plays a very important role in these devices when the active layer is below 10 nm, and it can modify significantly the performance of the transistors due to the reduction in the inversion layer population and the modification of transport conditions inside the active zone. Starting from an analysis of the results obtained within a semi-classical framework, we present the discussion of the dynamic and noise results when the effective potential approach is considered for the description of quantum effects in a particle-based Monte Carlo simulator. The main static and dynamic figures of merit are investigated, together with the intrinsic noise sources, thus allowing to provide a full comprehension of the inner physics of the devices and elucidating the consequences of quantum mechanical space-quantization effects (like charge repulsion from the gate-oxide boundaries). Results show that neglecting quantum phenomena leads to an important overestimation of gate capacitance and device transconductance and an underestimation of induced gate noise at RF and microwave frequency ranges.
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Raúl Rengel, Raúl Rengel, Tomás González, Tomás González, María Jesús Martín, María Jesús Martín, "Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546994; https://doi.org/10.1117/12.546994
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