Semiconductor device and noise sources modeling: design methods and tools oriented to nonlinear H.F. oscillator CAD

Jean-Christophe Nallatamby; Raphael Sommet; Michel Prigent; Juan Obregon

doi:10.1117/12.546325

25 May 2004 Semiconductor device and noise sources modeling: design methods and tools oriented to nonlinear H.F. oscillator CAD

Jean-Christophe Nallatamby, Raphael Sommet, Michel Prigent, Juan Obregon

Author Affiliations +

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546325
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

Designing oscillator circuits at RF and microwaves requires specific knowledge in extremely varied fields of electronics. The following items will be the core of the presentation: - The physical processes leading to low-frequency noise in semi-conductor devices and the nonlinear behavior of the noise sources in large signal operating conditions will be detailed - Transistor modeling: A special emphasis will be put on the low-frequency noise modeling associated to the nonlinear transistor models. - Simulations tools: In order to simulate accurately the phase noise in free-running nonlinear oscillator circuits, the frequency domain approach based on the conversion matrices formalism which is related to the harmonic balance formalism will be detailed. - Design rules for low phase noise operation Theoretical conditions to be fulfilled by the circuit will be detailed on the basis of the Leeson analysis revisited. The need of new characterizations and extraction methods of noise sources in actual transistors, for a better prediction of noise performances of nonlinear circuits will be recalled.

Citation Download Citation

Jean-Christophe Nallatamby, Raphael Sommet, Michel Prigent, and Juan Obregon "Semiconductor device and noise sources modeling: design methods and tools oriented to nonlinear H.F. oscillator CAD", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.546325

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available