Simulation of cyclostationary noise in semiconductor devices

Simona Donati Guerrieri; Fabrizio Bonani; Giovanni Ghione

doi:10.1117/12.546667

25 May 2004 Simulation of cyclostationary noise in semiconductor devices

Simona Donati Guerrieri, Fabrizio Bonani, Giovanni Ghione

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546667
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

The paper reviews the physics-based approach to the frequency conversion and noise analysis of semiconductor devices operating in forced large-signal (quasi) periodic regime. Noise analysis under large-signal operation is presented as a direct extension of the classical physics-based noise simulation technique where the modulated microscopic noise sources are propagated to the external device terminals through Green's functions. A complete discussion of a simple yet significant case study is presented with reference to a junction diode, which allows for an analytical cyclostationary noise model. To complete the paper, we include an analysis of the validity of two widely exploited approximated system-oriented cyclostationary noise modelling approaches, based on the modulation of small-signal stationary noise spectra.

Citation Download Citation

Simona Donati Guerrieri, Fabrizio Bonani, and Giovanni Ghione "Simulation of cyclostationary noise in semiconductor devices", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.546667

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