Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

Jean-Guy Tartarin; Abdelali Rennane; Elena Angeli; Laurent Bary; Jean-Claude De Jaeger; Sylvain Delage; Robert Plana; Jacques Graffeuil

doi:10.1117/12.547022

25 May 2004 Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

Jean-Guy Tartarin, Abdelali Rennane, Elena Angeli, Laurent Bary, Jean-Claude De Jaeger, Sylvain Delage, Robert Plana, Jacques Graffeuil

Author Affiliations +

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.547022
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

AlGaN/GaN HEMTs are promising devices not only for high frequency power amplification but also for non-linear applications such as VCO. Therefore an assessment of their low frequency noise (LFN) is needed since it can be up-converted around the RF carrier. We have therefore compared different devices either made on sapphire or silicon in order to know which ones feature the lowest LFN. This study involves static and low frequency noise measurements (two different LFN set-up will be used and compared). GaN HEMT devices featuring several gate dimensions have been measured for different biasing conditions both in ohmic and saturation regime. We have compared sapphire based devices with silicon based ones with respect to their LFN levels. In a second part of this work, we report on some reliability results of HEMT on sapphire substrates: identification of defects has been achieved with the help of static measurements, and we make use of low frequency noise as well as physical simulation in order to understand the operating mode of the device. For the first time, we correlate the γ of the 1/f^γ LFN spectrum with transport mechanisms of the carriers: we found that γ strongly depends on the carriers conduction path. This hypothesis has been checked for HEMT on silicon substrate.

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Jean-Guy Tartarin, Abdelali Rennane, Elena Angeli, Laurent Bary, Jean-Claude De Jaeger, Sylvain Delage, Robert Plana, and Jacques Graffeuil "Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.547022

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