Bulk mechanism of mobility fluctuation depending on features of the semiconductor-environment interface

Slavik V. Melkonyan

doi:10.1117/12.546829

25 May 2004 Bulk mechanism of mobility fluctuation depending on features of the semiconductor-environment interface

Slavik V. Melkonyan

Proceedings Volume 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II; (2004) https://doi.org/10.1117/12.546829
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

The influence of surface scatterings on damping of the equilibrium fluctuations of the electron distribution function, originating in the bulk of homogeneous, bounded semiconductors is discussed as a result of random phonon-phonon scatterings. The peculiarities of (acoustic) phonons refraction on the flat interface are investigated. It is shown that only certain discrete magnitudes of phonons wave vectors satisfy the refraction laws. So-called "refraction points" are discovered. It is established that relaxation of longer-wavelength electron distribution function fluctuation depends on processes of surface reflection and refraction of electrons and phonons. It is shown that in the semiconductors with not very large sizes the damping is also conditioned by the phonons quasi-momentum direction diffusion. It the microscopic mechanism of such diffusion is analyzed.

Citation Download Citation

Slavik V. Melkonyan "Bulk mechanism of mobility fluctuation depending on features of the semiconductor-environment interface", Proc. SPIE 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II, (25 May 2004); https://doi.org/10.1117/12.546829

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