25 May 2004 Flicker and generation-recombination noise in Hg1-xCdxTe photoconductors based on MBE-grown multilayer structures
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Proceedings Volume 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II; (2004) https://doi.org/10.1117/12.547209
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
Spectral density of "generation-recombination" noise voltage <δV2gr> ("g-r noise") in Photoconductive Mercury-Cadmium Telluride / Hg1-xCdxTe (PC MCT) infrared radiation detectors with absorber n-Hg1-xCdxTe layer was calculated. Variations of <δV2gr> with doping level (n ≈ Nd), ambient background flux density (Qbgr, Tbgr ≈ 300 K), electrical bias (Vb/Ib) and design of sensitive pixel were analyzed. Spectral density of low-frequency noise as superposition of Flicker-noise "1/f", g-r noise resulting from fluctuations in generation-recombination rates of equilibrium (thermal) charge carriers <δV2gr, th> and excess charge carriers exited by background photons <δV2gr,bgr> and Johnson-Nyquist noise <δV2JN> were examined in Hg1-xCdxTe photoconductors based on MBE-grown multi-layer structures. Noise measurements were performed on Long-Wave (LWIR) PC MCT detectors with responsivity peak wavelength 10 ≤ λp ≤ 12 μm at operating temperature Top ≈ 290-300 K and 78 K. Registration and recording of noise voltage spectral density graphs were performed in frequency range from 6 Hz to 12.5 kHz with resolution equals to 6 Hz. Tested PC MCT detectors show extremely low spectral density of excess Flicker-noise with cut-off frequency (Fco) ranging from 10 to 300 Hz. Measured dependencies of g-r noise voltage spectral density are correlated with calculations.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Galina V. Chekanova, Albina A. Drugova, Alexander V. Kurbatov, and Mikhail S. Nikitin "Flicker and generation-recombination noise in Hg1-xCdxTe photoconductors based on MBE-grown multilayer structures", Proc. SPIE 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II, (25 May 2004); doi: 10.1117/12.547209; https://doi.org/10.1117/12.547209
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