25 May 2004 RTS in submicron MOSFETS and quantum dots
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Proceedings Volume 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II; (2004) https://doi.org/10.1117/12.547744
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states, too. The current modulation is then represented by a secondary process Y(t). The proposed model can explain some of the complex switching phenomena being measured in nanoscale devices. The quadratic dependence of the capture rate on the current and the noise spectral density dependence on the current and temperature are analysed. It is shown that the occupation time probability density for emission is given by a superposition of two exponential dependencies, whereas the capture time constant distribution is purely exponential.
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Josef Sikula, Jan Pavelka, Vlasta Sedlakova, Munecazu Tacano, Sumihisa Hashiguchi, Masato Toita, "RTS in submicron MOSFETS and quantum dots", Proc. SPIE 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II, (25 May 2004); doi: 10.1117/12.547744; https://doi.org/10.1117/12.547744
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