4 June 2004 Electron temperature in semiconductors in quantizing magnetic fields
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Proceedings Volume 5477, Sixth International Conference on Correlation Optics; (2004) https://doi.org/10.1117/12.560071
Event: Sixth International Conference on Correlation Optics, 2003, Chernivsti, Ukraine
Abstract
The impact of the heating electronic field and longitudinal quantizing magnetic field (within quantum limit and under random degree of quantization) on electronic gas of non-degenerate semiconductors has been investigated by means of the technique of effective electronic temperature. The relaxation by the energy and impulse on the acoustic phonons has been considered. The difference of electronic temperature dependence on the magnetic field intensity has been obtained. In the quantum limit the inelasticity of the scattering of carriers, localized in the plane orthogonal to the magnetic field, removes their heating, making the power transfer to crystalline lattice rather sufficient.
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Igor I. Pinchuk, Kateryna V. Stenina, "Electron temperature in semiconductors in quantizing magnetic fields", Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); doi: 10.1117/12.560071; https://doi.org/10.1117/12.560071
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