Local photoluminescence measurements of semiconductor surface defects

Pavel Tomanek; Marketa Benesova; Pavel Dobis; Jitka Bruestlova; Nadezda Uhdeova

doi:10.1117/12.559784

4 June 2004 Local photoluminescence measurements of semiconductor surface defects

Pavel Tomanek, Marketa Benesova, Pavel Dobis, Jitka Bruestlova, Nadezda Uhdeova

Proceedings Volume 5477, Sixth International Conference on Correlation Optics; (2004) https://doi.org/10.1117/12.559784
Event: Sixth International Conference on Correlation Optics, 2003, Chernivsti, Ukraine

Abstract

The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods -- widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough new capabilities to assure its application.

Citation Download Citation

Pavel Tomanek, Marketa Benesova, Pavel Dobis, Jitka Bruestlova, and Nadezda Uhdeova "Local photoluminescence measurements of semiconductor surface defects", Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); https://doi.org/10.1117/12.559784

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