4 June 2004 Photodetectors on the base of CdTe and on the base of InSe for optical coherent tomography
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Proceedings Volume 5477, Sixth International Conference on Correlation Optics; (2004) https://doi.org/10.1117/12.559761
Event: Sixth International Conference on Correlation Optics, 2003, Chernivsti, Ukraine
Abstract
The basic photo-electric properties of contacts of oxide semiconductor (In2O3, SnO2, ITO) with cadmium telluride and with indium selenide are analyzed from the point of view of their use as photodetectors for an optical tomography.
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V. P. Makhniy, V. P. Makhniy, Ya. M. Barasyuk, Ya. M. Barasyuk, M. V. Demych, M. V. Demych, Ye. V. Stets, Ye. V. Stets, O. I. Yanchuk, O. I. Yanchuk, } "Photodetectors on the base of CdTe and on the base of InSe for optical coherent tomography", Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); doi: 10.1117/12.559761; https://doi.org/10.1117/12.559761
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