4 June 2004 X-ray analysis of strain relaxation in multilayer systems InxGa1-xAs1-yNy/GaAs
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Proceedings Volume 5477, Sixth International Conference on Correlation Optics; (2004); doi: 10.1117/12.560019
Event: Sixth International Conference on Correlation Optics, 2003, Chernivsti, Ukraine
Abstract
The multilayer nano-scale systems contained one or two quantum wells InxGa1-xAs1-yNy have been investigated by double-crystal X-ray diffractometry. The growth conditions, composition of initial compounds were considered. It is shown that the processes of interdiffusion of In and Ga atoms nearby the interfaces of layer with QW were took place and influenced on the properties of considered multilayer systems. The principle structural parameters of multilayered InxGa1-xAs1-yNy/GaAs systems and contents of nitrogen in the quantum well and buffer layers were estimated.
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Markus Pessa, Emil-Mihai Pavelescu, Igor M. Fodchuk, V. B. Gevyk, A. P. Shpak, V. B. Molodkin, E. N. Kislovskii, S. I. Olikhovskii, "X-ray analysis of strain relaxation in multilayer systems InxGa1-xAs1-yNy/GaAs", Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); doi: 10.1117/12.560019; https://doi.org/10.1117/12.560019
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KEYWORDS
Quantum wells

Chemical species

Gallium arsenide

X-rays

Annealing

Gallium

X-ray diffraction

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