3 May 2004 Investigation of the mode-locked regime in a diode laser by microwave pumping at a current close to the generation threshold
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Abstract
In this paper, some results of experimental investigations of conditions of the mode-locked regime obtained by microwave pumping in a diode laser with an external cavity are presented. It was observed that the mode-locked regime is achieved at certain power levels of the microwave oscillator at pumping currents close to the generation threshold.
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Sergei N. Bagaev, Sergei N. Bagaev, S. V. Chepurov, S. V. Chepurov, V. M. Klementyev, V. M. Klementyev, A. V. Kashirsky, A. V. Kashirsky, S. A. Kuznetsov, S. A. Kuznetsov, V. S. Pivtsov, V. S. Pivtsov, V. F. Zakharyash, V. F. Zakharyash, } "Investigation of the mode-locked regime in a diode laser by microwave pumping at a current close to the generation threshold", Proc. SPIE 5480, Laser Optics 2003: Diode Lasers and Telecommunication Systems, (3 May 2004); doi: 10.1117/12.558414; https://doi.org/10.1117/12.558414
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