10 June 2004 Simulation of the EUV-lithography projection system and nanometer features imaging
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Abstract
The illumination system presented in the paper consists of an elliptical mirror collecting light in the solid angle over 103 and two plane mirrors (one of them is a grazing incidence mirror). The projection lens consists of two 4th-order aspherical mirrors with the diminished obscuration 0.36. The simultaneous exposure wafer area is 0.82 x 0.82 mm2 and NA = 0.36. The obscuration of the projection lens and obscured aperture of the illumination system influence the contrast of nanometer features of image. Mathematical simulation of imaging by the partially coherent theory is performed for target bars with L&S 15, 30, and 45 nanometers. The results of computer simulation give the reliable values of contrast 0.50, 0.58 and 0.6 correspondingly.
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Nikolay B. Voznesensky, Nikolay B. Voznesensky, Alexander P. Zhevlakov, Alexander P. Zhevlakov, } "Simulation of the EUV-lithography projection system and nanometer features imaging", Proc. SPIE 5482, Laser Optics 2003: Superintense Light Fields and Ultrafast Processes, (10 June 2004); doi: 10.1117/12.560163; https://doi.org/10.1117/12.560163
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