Paper
22 July 2004 Applications of GaN-based materials in modern optoelectronics
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Proceedings Volume 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II; (2004) https://doi.org/10.1117/12.568864
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, 2003, Wilga, Poland
Abstract
In this paper new designs of modern optoelectronics devices based on GaN-type materials are presented. First, fundamental properties of gallium nitrides are presented, with special attention paid to its optical characteristics. Then examples of devices fabricated at Wroclaw University of Technology are shown, namely MSM detectors based on AlGaN. A short literature overview of devices based on gallium nitride compounds is also given. Presented applications include DFB lasers, structure, LED, optical waveguides, photonic crystals and light modulators made of GaN compounds.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rafal Dylewicz, Sergiusz Z. Patela, and Regina Paszkiewicz "Applications of GaN-based materials in modern optoelectronics", Proc. SPIE 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, (22 July 2004); https://doi.org/10.1117/12.568864
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Cited by 4 scholarly publications.
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KEYWORDS
Gallium nitride

Light emitting diodes

Sapphire

Silicon carbide

Waveguides

Indium gallium nitride

Optoelectronics

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