Silicon avalanche photodiodes developed at the Institute of Electron Technology

Iwona Wegrzecka; Maciej Wegrzecki; Jan Bar; Maria Grynglas; Andrzej Uszynski; Remigiusz Grodecki; Piotr B. Grabiec; Sylwester Krzeminski; Tadeusz Budzynski

doi:10.1117/12.568913

22 July 2004 Silicon avalanche photodiodes developed at the Institute of Electron Technology

Iwona Wegrzecka, Maciej Wegrzecki, Jan Bar, Maria Grynglas, Andrzej Uszynski, Remigiusz Grodecki, Piotr B. Grabiec, Sylwester Krzeminski, Tadeusz Budzynski

Author Affiliations +

Proceedings Volume 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II; (2004) https://doi.org/10.1117/12.568913
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, 2003, Wilga, Poland

Abstract

Silicon avalanche photodiodes (APDs) -- due to the effect of avalanche multiplication of carriers in their structure -- are most sensitive and fastest detectors of visible and near infrared radiation. Also the value of noise equivalent power NEP of these detectors is the smallest. In the paper, the design, technology and properties of the silicon avalanche photodiodes with a n⁺ - p - π - p⁺ epiplanar structure developed at the Institute of Electron Technology (ITE) are presented. The diameters of photosensitive area range from 0.3 mm to 5 mm. The ITE photodiodes are optimized for the detection of the 800 nm ÷ 850 nm radiation, but the detailed research on spectral dependencies of the gain and noise parameters has revealed that the spectral operating range of the ITE photodiodes is considerable wider and achieves 550 ÷ 1000 nm. These photodiodes can be used in detection of very weak and very fast optical signals. Presently in the world, the studies are carried out on applying the avalanche photodiodes in detection of X radiation and in the scintillation detection of nuclear radiation.

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Iwona Wegrzecka, Maciej Wegrzecki, Jan Bar, Maria Grynglas, Andrzej Uszynski, Remigiusz Grodecki, Piotr B. Grabiec, Sylwester Krzeminski, and Tadeusz Budzynski "Silicon avalanche photodiodes developed at the Institute of Electron Technology", Proc. SPIE 5484, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, (22 July 2004); https://doi.org/10.1117/12.568913

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KEYWORDS

Avalanche photodetectors

Avalanche photodiodes

Silicon

Photodiodes

Sensors

Scintillation

Optical lithography

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