The NIRCam instrument will fly ten of Rockwell Scientific’s infrared molecular beam epitaxy HgCdTe 2048x2048 element detector arrays, each the largest available with current technology, for a total of 40 Megapixels. The instrument will have two varieties of MBE HgCdTe, a SWIR detector with λco = 2.5 μm, for the shortwave channel of NIRCam (0.6-2.3 μm); and a MWIR detector with λco = 5.3 μm, for the longwave channel of NIRCam (2.4-5.0 μm). Demonstrated mean detector dark currents less than 0.01 electrons per second per pixel at operating temperatures below 42 K for the MWIR and below 80 K for the SWIR, combined with quantum efficiency in excess of 80 percent and read noise below 6 electrons rms, make these detector arrays by far the most sensitive SWIR and MWIR devices in the world today. The unique advantages of molecular beam epitaxy as well as FPA data on noise, dark current, quantum efficiency, and other performance metrics will be discussed. In addition, the focal plane assembly package designs will be presented and discussed.