Paper
29 September 2004 Development of thick back-illuminated CCD to improve quantum efficiency in optical longer wavelength using high-resistivity n-type silicon
Yukiko Kamata, Satoshi Miyazaki, Masaharu Muramatsu, Hisanori Suzuki, Kazuhisa Miyaguchi, Takeshi Go Tsuru, Shin-ichiro Takagi, Emi Miyata
Author Affiliations +
Abstract
Quantum Efficiency (QE) of CCDs decreases at λ >~ 0.7 μm since photons penetrate a depletion layer of CCD. If one makes the layer thicker, the QE will be largely improved. In collaboration with HAMAMATSU Photonics, we have been developing the thicker CCDs which are implemented on the high resistivity n-type silicon wafers. We have made several wafer runs to optimize the basic characteristics of the devices such as charge transfer efficiency (CTE), full-well and node sensitivities of the amplifiers. The results obtained so far mostly satisfied the specifications imposed by astronomical observations. We also attempted to build back-side illuminated devices to realize high QE in wider wavelength. The test devices shows that the QE exceeds 60% at 1 μm, which is roughly 5 ~ 6 times improvement over ordinary CCDs. We will present the current status of the projects.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yukiko Kamata, Satoshi Miyazaki, Masaharu Muramatsu, Hisanori Suzuki, Kazuhisa Miyaguchi, Takeshi Go Tsuru, Shin-ichiro Takagi, and Emi Miyata "Development of thick back-illuminated CCD to improve quantum efficiency in optical longer wavelength using high-resistivity n-type silicon", Proc. SPIE 5499, Optical and Infrared Detectors for Astronomy, (29 September 2004); https://doi.org/10.1117/12.552515
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Cited by 12 scholarly publications.
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KEYWORDS
Charge-coupled devices

Quantum efficiency

Silicon

Astronomy

X-rays

Semiconducting wafers

Electrons

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