29 September 2004 First results of DEPFET-based active-pixel-sensor prototypes for the XEUS wide-field imager
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The concept of an Active Pixel Sensor (APS) based on the integrated detector/amplifier structure DEPFET (DEpleted P-channel Field Effect Transistor) has been developed to cope with the challenging requirements of the XEUS Wide Field Imager. The DEPFET-APS combines high energy resolution, fast readout, and random accessible pixels allowing the application of flexible readout modes. First prototypes of DEPFET-based Active Pixel Sensors with a 64 x 64 pixel format and 75 μm x 75 μm pixel area have been produced at the MPI semiconductor laboratory. The APS is read out row by row, i.e. the pixel signals of one row are processed in parallel by a 64 channel CMOS amplifier/multiplexer chip of the CAMEX type. The addressing of one row of pixels for readout and reset is done by two control chips of the SWITCHER type fabricated in a high-voltage CMOS technology. The processing time for one row is of the order of a few micro-seconds. APS operation, the control and data acquisition system are described, and first experimental results are presented.
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Johannes Treis, Johannes Treis, Peter Fischer, Peter Fischer, Olaf Halker, Olaf Halker, Matthias Harter, Matthias Harter, Sven Herrmann, Sven Herrmann, Robert Kohrs, Robert Kohrs, Hans Krueger, Hans Krueger, Peter Lechner, Peter Lechner, Gerhard Lutz, Gerhard Lutz, Ivan Peric, Ivan Peric, Matteo Porro, Matteo Porro, Rainer H. Richter, Rainer H. Richter, Lothar Strueder, Lothar Strueder, Marcel Trimpl, Marcel Trimpl, Norbert Wermes, Norbert Wermes, } "First results of DEPFET-based active-pixel-sensor prototypes for the XEUS wide-field imager", Proc. SPIE 5501, High-Energy Detectors in Astronomy, (29 September 2004); doi: 10.1117/12.551536; https://doi.org/10.1117/12.551536

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