2 June 2004 Aerial image measurement technique for today's and future 193-nm lithography mask requirements
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Proceedings Volume 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2004) https://doi.org/10.1117/12.568016
Event: 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2004, Dresden, Germany
Abstract
The Aerial Image Measurement System (AIMS) for 193 nm lithography emulation has been brought into operation worldwide successfully. Adjusting optical equivalent settings to steppers/scanners the AIMS system for 193 nm allows to emulate any type of reticles for 193 nm lithography. The overall system performance is demonstrated by AIMS measurements at 193 nm wavelength on binary chrome masks and phase shift masks. Especially for evaluation of 65 nm node lithography performance process window results will be discussed. An ArF excimer laser is in use for illumination. Therefore a beam homogenizer is needed to reduce the speckles in the laser beam and ensure a similar illumination uniformity as the longer wavelength systems, 248 nm and longer, using an arc source. A new beam homogenizing technique will be presented and illumination results compared to the current solution. The latest results on enhanced illumination uniformity exceed the current performance. A newly developed hybrid objective for high resolution imaging is tested for use of high resolution imaging in order to review defects and investigate repairs which do not print under stepper equivalent optical settings. An outlook will be given for extension of 193 nm aerial imaging down to the 45 nm node. Polarization effects will be discussed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Axel M. Zibold, Axel M. Zibold, Thomas Scheruebl, Thomas Scheruebl, Alexander Menck, Alexander Menck, Robert Brunner, Robert Brunner, J. Greif, J. Greif, } "Aerial image measurement technique for today's and future 193-nm lithography mask requirements", Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); doi: 10.1117/12.568016; https://doi.org/10.1117/12.568016
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