2 June 2004 Implementation of a transparent etch stop layer for an improved alternating PSM
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Proceedings Volume 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2004) https://doi.org/10.1117/12.568018
Event: 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2004, Dresden, Germany
Abstract
Alternating phase shift masks (alt. PSM) are emerging as an attractive resolution enhancement technique. Although alt. PSM is a technique that clearly improves resolution, there are some inherent disadvantages that are induced by the manufacturing process. Intensity imbalance, phase non-uniformity and quartz defects diminish the performance of an alternating PSM. Many of these disadvantages can be a result of imprecise quartz etching. By implementing a transparent etch stop layer, these deficiencies can be minimized. The etch stop layer ensures that all of the quartz is etched and that over-etching will not induce a phase-shift error. This produces improved phase uniformity and eliminates quartz defects. The etch stop layer also has the ability to improve the image intensity balancing by reducing the intensity through the zero degree region. This paper discusses the advantages and manufacturability of alt. PSM using a transparent etch stop layer.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael J. Cangemi, Michael J. Cangemi, Darren Taylor, Darren Taylor, Matthew Lassiter, Matthew Lassiter, } "Implementation of a transparent etch stop layer for an improved alternating PSM", Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); doi: 10.1117/12.568018; https://doi.org/10.1117/12.568018
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