2 June 2004 Measurement results on after-etch resist coated features on the new Leica Microsystems' LWM270 DUV critical dimension metrology system
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Proceedings Volume 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2004) https://doi.org/10.1117/12.568019
Event: 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2004, Dresden, Germany
Abstract
Process control in photomask manufacturing is crucial for improving and maintaining optimal yields. The LWM270DUV critical dimension (CD) measurement system is the first tool ever designed for photomask manufacturers that combines both UV (365 nm wavelength light) and DUV (248 nm wavelength light) for CD measurements. UV light illumination was integrated into the LWM270DUV to allow photomask makers to perform after etch inspection (AEI) on DUV resists minimizing exposure effects. The increased resolution of UV illumination allows for measurement of features as small as 300 nm. Improved measurement algorithms as well as improvements in the illumination system have reduced the uncertainty of measurements resulting in improved performance. This paper details recent measurement results of various feature types on different substrate types using UV transmitted light.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John M. Whittey, John M. Whittey, Walter Steinberg, Walter Steinberg, } "Measurement results on after-etch resist coated features on the new Leica Microsystems' LWM270 DUV critical dimension metrology system", Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); doi: 10.1117/12.568019; https://doi.org/10.1117/12.568019
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