Paper
2 June 2004 Metrological characterization of new CD photomask standards
Werner Mirande, Bernd Bodermann, W. Haessler-Grohne, Carl G. Frase, Slawomir Czerkas, Harald Bosse
Author Affiliations +
Proceedings Volume 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2004) https://doi.org/10.1117/12.568020
Event: 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2004, Dresden, Germany
Abstract
We report on the metrological characterization of photomask standards which were developed within a project with industrial partners in Germany to be used as reference standards for different type of linewidth or CD metrology instruments. It was the objective to develop high quality mask standards which would allow to perform CD calibrations with smallest possible uncertainties and to use the standards within the project consortium as well as to make the standards available to interested third parties. The design of the standards consists of line as well as box structures, isolated as well as group patterns, each in different tones and in x/y-orientation. The structures are all placed on a regular measurement grid to be easily accessible by automated CD metrology systems. Target CD values are going down to 0,2 μm or even below with smallest CD steps of 20 nm and line to space ratio within groups is varied between 1:1 and 1:5. Additionally, there are larger CD structures and clear fields and different pitch structures on the mask. This contribution will concentrate on the description of the methods and instrumentation used at the PTB for investigation and calibration of the standards. Different methods of optical transmission microscopy as well as low energy scanning electron microscopy and scanning probe microscopy were applied which all were developed to provide traceable linewidth calibration values. This implies, that suitable physical models for the interaction of the different probes with the photomask structures had to be developed for a meaningful interpretation of the measurement signals for all type of CD metrology methods. The analysis also has to take into account the influences of structure imperfections, like edge slope and line edge roughness.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Werner Mirande, Bernd Bodermann, W. Haessler-Grohne, Carl G. Frase, Slawomir Czerkas, and Harald Bosse "Metrological characterization of new CD photomask standards", Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); https://doi.org/10.1117/12.568020
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Cited by 2 scholarly publications.
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KEYWORDS
Critical dimension metrology

Scanning electron microscopy

Standards development

Calibration

Photomasks

Chromium

Atomic force microscopy

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