15 July 2004 Absorption saturation in semiconductors under local irradiation by short light pulses
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Proceedings Volume 5506, Nonresonant Laser-Matter Interaction (NLMI-11); (2004) https://doi.org/10.1117/12.580001
Event: Nonresonant Laser-Matter Interaction (NLMI-11), 2003, St. Petersburg, Russian Federation
Abstract
The theoretical study of the some processes taking place under the intense light excitation of the small area of the semiconductor surface by the short laser pulse had been carried out. The results of the performed analysis show that the absorption due to the “impurity depletion” must be taken into account in the processes of the ultra-short pulse action on the extremely small areas of semitransparent materials.
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Larisa P. Amosova, Larisa P. Amosova, Igor A. Didenko, Igor A. Didenko, Vladimir L. Komolov, Vladimir L. Komolov, } "Absorption saturation in semiconductors under local irradiation by short light pulses", Proc. SPIE 5506, Nonresonant Laser-Matter Interaction (NLMI-11), (15 July 2004); doi: 10.1117/12.580001; https://doi.org/10.1117/12.580001
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