20 July 2004 Activation spectroscopy of solid Ne
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Proceedings Volume 5507, XVI International Conference on Spectroscopy of Molecules and Crystals; (2004) https://doi.org/10.1117/12.569826
Event: XVI International Conference on Spectroscopy of Molecules and Crystals, 2003, Sevastopol, Ukraine
Abstract
Radiation-induced defects formed via electronic subsystem in solid Ne were studied combining thermally stimulated luminescence (TSL) and thermally stimulated exoelectron emission (TSEE) techniques. In the present paper the TSL and TSEE measurements of solid Ne were performed for the first time. The whole set of obtained experimental data suggests that in solid Ne at the temperature 10.5 K the annihilation of electronically induced defects occurs. Comparing experimental data with theoretical calculation the atomic configuration of radiation-induced defects was elucidated.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. V. Khyzhniy, I. V. Khyzhniy, O. N. Grigorashchenko, O. N. Grigorashchenko, A. N. Ogurtsov, A. N. Ogurtsov, E. V. Savchenko, E. V. Savchenko, M. Frankowski, M. Frankowski, A. M. Smith-Gicklhorn, A. M. Smith-Gicklhorn, V. E. Bondybey, V. E. Bondybey, } "Activation spectroscopy of solid Ne", Proc. SPIE 5507, XVI International Conference on Spectroscopy of Molecules and Crystals, (20 July 2004); doi: 10.1117/12.569826; https://doi.org/10.1117/12.569826
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