20 July 2004 Change of spectrums of electroluminescence epitaxial lightdiode structures during an acoustic emission
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Proceedings Volume 5507, XVI International Conference on Spectroscopy of Molecules and Crystals; (2004) https://doi.org/10.1117/12.569616
Event: XVI International Conference on Spectroscopy of Molecules and Crystals, 2003, Sevastopol, Ukraine
Abstract
For the first time it is shown, that the correlation in changes of electroluminescence spectrum and a threshold of origin of an acoustic emission in epitaxial lightdiode n+-n-p-structures GaP0.85As0.15 takes place. It is shown, that the density of a direct current of diode determines intensity of discrete acoustic emission, detrusion and redistribution of intensity in maximums of an electroluminescence spectrum, velocity and quantity of a degradation of emissive power.
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Oleg V. Lyashenko, Oleg V. Lyashenko, Yuriy O. Myagchenko, Yuriy O. Myagchenko, Vitaliy P. Veleshchuk, Vitaliy P. Veleshchuk, } "Change of spectrums of electroluminescence epitaxial lightdiode structures during an acoustic emission", Proc. SPIE 5507, XVI International Conference on Spectroscopy of Molecules and Crystals, (20 July 2004); doi: 10.1117/12.569616; https://doi.org/10.1117/12.569616
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