Description and availability of the SMARTS spectral model for photovoltaic applications

Daryl R. Myers; Christian A. Gueymard

doi:10.1117/12.555943

3 November 2004 Description and availability of the SMARTS spectral model for photovoltaic applications

Proceedings Volume 5520, Organic Photovoltaics V; (2004) https://doi.org/10.1117/12.555943
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

Limited spectral response range of photocoltaic (PV) devices requires device performance be characterized with respect to widely varying terrestrial solar spectra. The FORTRAN code "Simple Model for Atmospheric Transmission of Sunshine" (SMARTS) was developed for various clear-sky solar renewable energy applications. The model is partly based on parameterizations of transmittance functions in the MODTRAN/LOWTRAN band model family of radiative transfer codes. SMARTS computes spectra with a resolution of 0.5 nanometers (nm) below 400 nm, 1.0 nm from 400 nm to 1700 nm, and 5 nm from 1700 nm to 4000 nm. Fewer than 20 input parameters are required to compute spectral irradiance distributions including spectral direct beam, total, and diffuse hemispherical radiation, and up to 30 other spectral parameters. A spreadsheet-based graphical user interface can be used to simplify the construction of input files for the model. The model is the basis for new terrestrial reference spectra developed by the American Society for Testing and Materials (ASTM) for photovoltaic and materials degradation applications. We describe the model accuracy, functionality, and the availability of source and executable code. Applications to PV rating and efficiency and the combined effects of spectral selectivity and varying atmospheric conditions are briefly discussed.

Citation Download Citation

Daryl R. Myers and Christian A. Gueymard "Description and availability of the SMARTS spectral model for photovoltaic applications", Proc. SPIE 5520, Organic Photovoltaics V, (3 November 2004); https://doi.org/10.1117/12.555943

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