Design of an auto-zeroed differential organic thin film field-effect transistor amplifier for sensor applications

David M. Binkley; Nikhil Verma; Robert L. Crawford; Erik J. Brandon; Thomas N. Jackson

doi:10.1117/12.559934

18 October 2004 Design of an auto-zeroed differential organic thin film field-effect transistor amplifier for sensor applications

David M. Binkley, Nikhil Verma, Robert L. Crawford, Erik J. Brandon, Thomas N. Jackson

Author Affiliations +

Proceedings Volume 5522, Organic Field-Effect Transistors III; (2004) https://doi.org/10.1117/12.559934
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacene OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1 mV dc signal in the presence of 500 mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

Citation Download Citation

David M. Binkley, Nikhil Verma, Robert L. Crawford, Erik J. Brandon, and Thomas N. Jackson "Design of an auto-zeroed differential organic thin film field-effect transistor amplifier for sensor applications", Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); https://doi.org/10.1117/12.559934

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available