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18 October 2004 Organic bistable devices with high switching voltage
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Electrical bistable device with high switching voltage is developed. The device structure is Al electrode layer/ metal dispersed layer/ organic material layer/ Au electrode layer, whose thickness is 60/30/80/60nm, respectively. The organic material is a type of bisquinomethane, 2, 5-bis {(3’, 5’-di(tert-butyl)-4’-oxocyclohexa-2’, 5’-dienylidene)-(4"-methoxyphenyl) methyl} thiophene (DODMT). The metal dispersed layer is formed by co-evaporation of DODMT and Al. With this structure, the switching voltage around 18V is attained. The device works even without the metal dispersed layer, in that case, with switching voltage of around 5V. The origin of bistability is estimated to be tunneling charge injection caused by charge accumulation at the Au/organic interface and subsequent enhancement of electrical field. Charge accumulation has also been observed in the metal dispersed layer. It would retard charge injection from Al electrode to DODMT layer, and consequently, to the Au/organic interface, and make the switching voltage high.
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Haruo Kawakami, Hisato Kato, Keisuke Yamashiro, Nobuyuki Sekine, and Masami Kuroda "Organic bistable devices with high switching voltage", Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004);

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