18 October 2004 Tetrabenzoporphyrin semiconductor for transistor applications
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Abstract
An organic field effect transistor (FET) device based on a solution-processible tetrabenzoporphyrin (BP) has been developed. BP is derived from its precursor that is soluble in some organic solvents and gives an amorphous film of high quality by spin coating. A polycrystalline film of BP is obtained by thermal conversion of the precursor at about 200 degree C. The FET characteristics are found to largely depend on the purity, device structure, and fabrication process. The device performance was: mobility of 1.7 X 10-2 cm2/Vs and on/off ratio of 105. We have also analyzed the crystal structure of BP and characterized its electronic and morphological properties.
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Shinji Aramaki, Shinji Aramaki, Yoshimasa Sakai, Yoshimasa Sakai, Ryuichi Yoshiyama, Ryuichi Yoshiyama, Kiyoshi Sugiyama, Kiyoshi Sugiyama, Noboru Ono, Noboru Ono, Jin Mizuguchi, Jin Mizuguchi, } "Tetrabenzoporphyrin semiconductor for transistor applications", Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); doi: 10.1117/12.566540; https://doi.org/10.1117/12.566540
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