Translator Disclaimer
18 October 2004 Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers
Author Affiliations +
Abstract
We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miao Xiang Chen, Erik Perzon, Mats R. Andersson, and Magnus Bergrren "Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers", Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); https://doi.org/10.1117/12.561389
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top