18 October 2004 Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers
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We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.
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Miao Xiang Chen, Miao Xiang Chen, Erik Perzon, Erik Perzon, Mats R. Andersson, Mats R. Andersson, Magnus Bergrren, Magnus Bergrren, "Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers", Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); doi: 10.1117/12.561389; https://doi.org/10.1117/12.561389

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