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29 September 2004 Chalcogenide-based system and its thin films for phase change optical data storage
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Over recent years the demand for optical data storage devices with high speed has become increasingly more evident. Phase change optical storage is based on the rapid crystalline to amorphous (and vice versa) transition in a thin phase change layer enabled by laser induced heating. Among some of the potential candidates, AgSbTe alloy appears to be one of the latest promising materials that have drawn worldwide attention. Using this material as the active layer has other advantages such as the problem of material flow is reduced to a great extent. Moreover the marks written in AgSbTe based media have a well defined shape with sharp edges, leading to intrinsically lower jitter values than observed for GeSbTe based media. In the present work Ag x-Sb 2 (1-x)-Te 3 (1-x) alloys and films are developed for different composition. The present work describes the systematic study of thermal, structural and optical properties of amorphous Ag-Sb-Te system
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Yagya Deva Sharma and Promod K. Bhatnagar "Chalcogenide-based system and its thin films for phase change optical data storage", Proc. SPIE 5527, Advances in Thin Film Coatings for Optical Applications, (29 September 2004);

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