29 September 2004 Characterization of C70 doped poly(styrene) -b- poly(hexyl methacrylate) (PS-PHMA) thin film on c-Si substrate with a Jobin Yvon UVISEL phase- modulated spectroscopic ellipsometer (PMSE).
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Abstract
Spectroscopic ellipsometry is commonly used for the optical characterization of solid state thin films and bulk substrates. In recent years, it has also gained widespread use in characterizing organic films . The discovery of carbon nano-tubes has increased the utility of organic films by allowing the engineer to alter the electrical and mechanical properties of the material by doping the film with these graphite structures. Proper understanding through PMSE characterization of the structure is necessary to control desired optical and electrical properties. In this work we present mothodes of PMSE as an advantageous, non-destructive optical tool for the study of C70 doped PS-PHMA thin film on a c-Si(100) wafer. For the samples measured, concentration of C70 is reported along with dispersion relations for PS-PHMA films in the UV-Vis spectrum for untreated, heated and shear aligned films. There is also evidence that the C70 may also align within the micro-domain of the PS-PHMA producing an anisotropic film.
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Alan Richard Kramer, Alan Richard Kramer, Nan Yao, Nan Yao, Vincent Pelletier, Vincent Pelletier, } "Characterization of C70 doped poly(styrene) -b- poly(hexyl methacrylate) (PS-PHMA) thin film on c-Si substrate with a Jobin Yvon UVISEL phase- modulated spectroscopic ellipsometer (PMSE).", Proc. SPIE 5527, Advances in Thin Film Coatings for Optical Applications, (29 September 2004); doi: 10.1117/12.559705; https://doi.org/10.1117/12.559705
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