High-temperature film thickness sensors for CVD process control

Scott F. Grimshaw

doi:10.1117/12.560442

29 September 2004 High-temperature film thickness sensors for CVD process control

Scott F. Grimshaw

Proceedings Volume 5527, Advances in Thin Film Coatings for Optical Applications; (2004) https://doi.org/10.1117/12.560442
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

A new film thickness sensor material, single crystal gallium orthophosphate (GaPO₄), has been investigated for use as a high temperature piezoelectric microbalance suitable for monitoring chemical vapor deposition (CVD) thin film processes. Our initial work has shown that gallium phosphate can operate at temperatures up to 930°C, and a reusable sensor housing can be constructed to hold the crystal for repeated runs. A significant shortcoming is that commercial film thickness monitors are not capable of accurately controlling GaPO₄ above 600°C due to the limitations of the oscillator electronics used in such monitors.

Citation Download Citation

Scott F. Grimshaw "High-temperature film thickness sensors for CVD process control", Proc. SPIE 5527, Advances in Thin Film Coatings for Optical Applications, (29 September 2004); https://doi.org/10.1117/12.560442

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