29 September 2004 High-temperature film thickness sensors for CVD process control
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Abstract
A new film thickness sensor material, single crystal gallium orthophosphate (GaPO4), has been investigated for use as a high temperature piezoelectric microbalance suitable for monitoring chemical vapor deposition (CVD) thin film processes. Our initial work has shown that gallium phosphate can operate at temperatures up to 930°C, and a reusable sensor housing can be constructed to hold the crystal for repeated runs. A significant shortcoming is that commercial film thickness monitors are not capable of accurately controlling GaPO4 above 600°C due to the limitations of the oscillator electronics used in such monitors.
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Scott F. Grimshaw, Scott F. Grimshaw, } "High-temperature film thickness sensors for CVD process control", Proc. SPIE 5527, Advances in Thin Film Coatings for Optical Applications, (29 September 2004); doi: 10.1117/12.560442; https://doi.org/10.1117/12.560442
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