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20 October 2004 Device performance of AlGaN-based 240-300-nm deep UV LEDs
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Abstract
Deep ultraviolet light emitting diodes (LEDs) with emission wavelengths shorter than 300 nm have been grown by metalorganic vapor phase epitaxy. A bottom emitting LED design is used which requires a high-Al content AlxGa1-xN (x = 0.5 - 0.8 ) buffer layer which has sufficient conductivity and is transparent to the quantum well emission wavelength. LEDs were flip chip mounted to a silicon submount which provides for good thermal performance as well as improved light extraction. For large area 1 mm x 1 mm LEDs emitting at 297 nm, an output power as high as 2.25 mW under direct current operation has been demonstrated at 500 mA with a forward voltage of 12.5 volts. For shorter wavelength LEDs emitting at 276 nm, an output power as high as 1.3 mW has been demonstrated under direct current operation at 300 mA with a forward voltage of 9.2 volts. Recent improvements in heterostructure design have resulted in quantum well emission at 276 nm with a peak intensity that is 330 times stronger than the largest sub-bandgap peak. LEDs with emission wavelengths as short as 237 nm have also been demonstrated.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arthur J. Fischer, Andrew A. Allerman, Mary Hagerott Crawford, Katherine H. A. Bogart, Stephen R. Lee, Robert J. Kaplar, and Weng W. Chow "Device performance of AlGaN-based 240-300-nm deep UV LEDs", Proc. SPIE 5530, Fourth International Conference on Solid State Lighting, (20 October 2004); https://doi.org/10.1117/12.567103
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