20 October 2004 Electrode design for InGaN/sapphire LEDs based on multiple thin ohmic-metal patches
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Abstract
We propose a new electrode design for InGaN/Sapphire LED chips. In the new design, the thin p-ohmic metal layer on the top surface of the chip is partitioned into standardized multiple patches. Each patch is then connected to the p-electrode pad by a metal-film type of series resistor whose value is tailored to its own patch such that the current density distribution in the active region under the patch is almost the same, eliminating the severe current crowding phenomenon observed in the conventional design. As a consequence, both the maximum output power achievable from a unit InGaN/sapphire LED chip and the device reliability would be significantly improved.
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Song Jae Lee, Song Jae Lee, } "Electrode design for InGaN/sapphire LEDs based on multiple thin ohmic-metal patches", Proc. SPIE 5530, Fourth International Conference on Solid State Lighting, (20 October 2004); doi: 10.1117/12.565078; https://doi.org/10.1117/12.565078
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