20 October 2004 Performance and application of high-power ultraviolet AlGaInN light-emitting diodes
Author Affiliations +
Abstract
We report on high output power from the quaternary AlGaInN multiple quantum well (MQW) ultraviolet light emitting diodes (UV LEDs) in the 340 nm and 280 nm wavelength range. The output power up to 1.5 mW from a 100 μm diameter device with bare-chip configuration was measured under room temperature cw operation. The internal quantum efficiency was estimated to be between 7 and 10%. In addition, the output power and external quantum efficiency for fully packaged 1x1mm2 large area device were as high as 54.6 mW and 1.45%, respectively, at the injection current of 200 A/cm2 under pulsed operation. The devices were incorporated into prototype system for fluorescence based bio-sensing. We also report the performance of 285 nm UV LEDs.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung Han, Seong-Ran Jeon, Maria Gherasimova, Jie Su, George Cui, Hongbo Peng, Eleni Makarona, Yiping He, Yoon-Kyu Song, Arto V. Nurmikko, Ling Zhou, Werner K. Goetz, Michael R. Krames, "Performance and application of high-power ultraviolet AlGaInN light-emitting diodes", Proc. SPIE 5530, Fourth International Conference on Solid State Lighting, (20 October 2004); doi: 10.1117/12.566891; https://doi.org/10.1117/12.566891
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

High-power UV-B LEDs with long lifetime
Proceedings of SPIE (March 13 2015)
Deep-ultraviolet LEDs fabricated in AlInGaN using MEMOCVD
Proceedings of SPIE (October 20 2004)
222 282 nm AlGaN and InAlGaN based deep UV LEDs...
Proceedings of SPIE (February 16 2009)
Influence of the barrier composition on the light output of...
Proceedings of SPIE (September 28 2007)
Simulation of deep ultraviolet light-emitting diodes
Proceedings of SPIE (September 14 2007)
III N multiple quantum wells based 285 to 340...
Proceedings of SPIE (July 03 2003)

Back to Top