18 October 2004 EUV microlithography: a challenge for optical metrology
Author Affiliations +
Abstract
EUVL (extreme ultraviolet lithography), utilizing an actinic wavelength of about 13 nm , appears to be the most promising technology approach to reach the 30 nm node. Calling for diffraction limited imaging performance, EUV demand unprecedented requirements for figure metrology and fabrication technology. This paper gives an overview over problems rising from the interferometric measurement of aspheric EUV mirrors.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gunther Seitz, Gunther Seitz, Stefan Schulte, Stefan Schulte, Udo Dinger, Udo Dinger, Oliver Hocky, Oliver Hocky, Bernhard Fellner, Bernhard Fellner, Markus Rupp, Markus Rupp, } "EUV microlithography: a challenge for optical metrology", Proc. SPIE 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II, (18 October 2004); doi: 10.1117/12.556317; https://doi.org/10.1117/12.556317
PROCEEDINGS
7 PAGES


SHARE
Back to Top