18 October 2004 Source collection optics for EUV lithography
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Next generation lithography is likely to deploy extreme UV (EUV) light at 13.5 nm wavelength for key manufacturing processes. Currently, all promising EUV light source concepts require efficient light collection optics in order to deliver sufficeintly high light power for profitable chip production. With densely nested Wolter-Type 1 reflective optics we designed, and fabricated such optics. In this paper we report on the latest achievements in design, development and on our first at wavelength testing results of such collection optics.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piotr Marczuk, Wilhelm Egle, "Source collection optics for EUV lithography", Proc. SPIE 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II, (18 October 2004); doi: 10.1117/12.549409; https://doi.org/10.1117/12.549409

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