For conventional wavelength (UV-Vis-IR) lasers delivering radiation energy to the surface of materials, ablation thresholds, ablation (etch) rates, and the quality of ablated structures often differ dramatically between short (typically nanosecond) and ultrashort (typically femtosecond) pulses. Various short-wavelength (l < 100 nm) lasers emitting pulses with durations ranging from ~ 10 fs to ~ 1 ns have recently been put into a routine operation. This makes it possible to investigate how the ablation characteristics depend on the pulse duration in the XUV spectral region. 1.2-ns pulses of 46.9-nm radiation delivered from a capillary-discharge Ne-like Ar laser (Colorado State University, Fort Collins), focused by a spherical Sc/Si multilayer-coated mirror were used for an ablation of organic polymers and silicon. Various materials were irradiated with ellipsoidal-mirror-focused XUV radiation (λ = 86 nm, τ = 30-100 fs) generated by the free-electron laser (FEL) operated at the TESLA Test Facility (TTF1 FEL) in Hamburg. The beam of the Ne-like Zn XUV laser (λ = 21.2 nm, τ < 100 ps) driven by the Prague Asterix Laser System (PALS) was also successfully focused by a spherical Si/Mo multilayer-coated mirror to ablate various materials. Based on the results of the experiments, the etch rates for three different pulse durations are compared using the XUV-ABLATOR code to compensate for the wavelength difference. Comparing the values of etch rates calculated for short pulses with those measured for ultrashort pulses, we can study the influence of pulse duration on XUV ablation efficiency. Ablation efficiencies measured with short pulses at various wavelengths (i.e. 86/46.9/21.2 nm from the above-mentioned lasers and ~ 1 nm from the double stream gas-puff Xe plasma source driven by PALS) show that the wavelength influences the etch rate mainly through the different attenuation lengths.