Characterization of strain and crystallographic defects in HgI2 single crystals

W. Brock Alexander; John Sandoval; Lodewijk van den Berg

doi:10.1117/12.565027

21 October 2004 Characterization of strain and crystallographic defects in HgI₂ single crystals

W. Brock Alexander, John Sandoval, Lodewijk van den Berg

Proceedings Volume 5540, Hard X-Ray and Gamma-Ray Detector Physics VI; (2004) https://doi.org/10.1117/12.565027
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

We investigated bulk-grown HgI₂ crystals to better understand the nature of crystallographic defects and strain/stress in different growth regions of the crystal and their affect on the performance of HgI₂-based radiation detectors. Double-axis and triple-axis high-resolution x-ray diffraction were used to characterize the mosaic structure and strain in HgI₂. Rocking curves revealed significant mosaic spreading in <110> growth regions exhibiting X-defects versus X-defect-free <100> growth regions. Both <110> and <100> growth regions exhibited little strain (~0.01%). We report the narrowest rocking curves (~ 9 arcsec) to date on HgI2 as a result of the resolution of the instrument (~ 6 arcsec). Raman spectroscopy was used collaboratively to confirm little residual stress in the crystals. We developed a growth rate ratio (chi) and show this geometric model used to describe crystal shape and regions of <100> and <110> growth. Optical characterization of X-defects are presented and discussed. Further the influence of crystallographic defects and strain on radiation detector performance are discussed.

Citation Download Citation

W. Brock Alexander, John Sandoval, and Lodewijk van den Berg "Characterization of strain and crystallographic defects in HgI₂ single crystals", Proc. SPIE 5540, Hard X-Ray and Gamma-Ray Detector Physics VI, (21 October 2004); https://doi.org/10.1117/12.565027

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