21 October 2004 Crystal growth, characterization, and fabrication of AgGaSe2 crystals as novel material for room-temperature radiation detectors
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Abstract
Silver gallium diselenide (AgGaSe2) is a semiconductor compound having an energy bangap of 1.7 eV, a value that is favorable for the room temperature radiation detection application. The starting material was synthesized from high purity elemental starting materials: 5N purity Se, 6N purity Ag, and 7N purity Ga. The crystals were grown at 880 °C in a three-zone semi-transparent gold-coated horizontal furnace. High resistivity (1.4 x 1011 ohm-cm) material was obtained and radiation detectors were fabricated. The response to gamma and alpha particles will be reported along with an analysis of the mobility - trapping time product for this novel material.
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Utpal N. Roy, Utpal N. Roy, Michael Groza, Michael Groza, Yunlong Cui, Yunlong Cui, Arnold Burger, Arnold Burger, Zane W. Bell, Zane W. Bell, Donald A. Carpenter, Donald A. Carpenter, } "Crystal growth, characterization, and fabrication of AgGaSe2 crystals as novel material for room-temperature radiation detectors", Proc. SPIE 5540, Hard X-Ray and Gamma-Ray Detector Physics VI, (21 October 2004); doi: 10.1117/12.563890; https://doi.org/10.1117/12.563890
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