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21 October 2004 Crystal growth, characterization, and testing of Cd0.9Zn0.1Te single crystals for radiation detectors
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Abstract
This paper describes our recent research in growing large single crystals of Cd0.9Zn0.1Te (CZT) by the vertical Bridgman technique using in-house processed zone refined precursor materials (Cd, Zn, and Te). The grown semi-insulating CZT crystals have shown high promise for high-resolution room-temperature radiation detectors due to their high dark resistivity (~1010 Ωcm), reasonably good charge transport properties [(μτ)e = (2-5) x 10-3 cm2/V] and low cost. The grown CZT single crystals (~2.5 cm diameter and up to 10 cm long) have demonstrated a very low radial Zn concentration deviation, low dislocation densities and Te precipitate/inclusions, and high infrared transmission. Details of the CZT single crystal growth, their physical and chemical analysis, surface processing, nuclear radiation detector fabrication, and testing of these devices are also presented.
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Krishna C. Mandal, Caleb Noblitt, Michael Choi, R. David Rauh, Utpal N. Roy, Michael Groza, Arnold Burger, David Eugene Holcomb, and Gerald E. Jellison Jr. "Crystal growth, characterization, and testing of Cd0.9Zn0.1Te single crystals for radiation detectors", Proc. SPIE 5540, Hard X-Ray and Gamma-Ray Detector Physics VI, (21 October 2004); https://doi.org/10.1117/12.566936
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